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The quantum limit in a Fermi liquid, realized when a single Landau level is occupied in strong magnetic fields, gives rise to unconventional states, including the fractional quantum Hall effect and excitonic insulators. Stronger interactions in metals with nearly localizedf-electron degrees of freedom increase the likelihood of these unconventional states. However, access to the quantum limit is typically impeded by the tendency off-electrons to polarize in a strong magnetic field, consequently weakening the interactions. In this study, we propose that the quantum limit in such systems must be approached in reverse, starting from an insulating state at zero magnetic field. In this scenario, Landau levels fill in the reverse order compared to regular metals and are closely linked to a field-induced insulator-to-metal transition. We identify YbB₁₂as a prime candidate for observing this effect and propose the presence of an excitonic insulator state near this transition.

 

The presence of inclusions, twinning, and low-angle grain boundaries, demanded to exist by the third law of thermodynamics, drive the behavior of quantum materials. Identification and quantification of these structural complexities often requires destructive techniques. X-ray micro-computed tomography (µCT) uses high-energy X-rays to non-destructively generate 3D representations of a material with micron/nanometer precision, taking advantage of various contrast mechanisms to enable the quantification of the types and number of inhomogeneities. We present case studies of µCT informing materials design of electronic and quantum materials, and the benefits to characterizing inclusions, twinning, and low-angle grain boundaries as well as optimizing crystal growth processes. We discuss recent improvements in µCT instrumentation that enable elemental analysis and orientation to be obtained on crystalline samples. The benefits of µCT as a non-destructive tool to analyze bulk samples should encourage the community to adapt this technology into everyday use for quantum materials discovery.

 

Rutile compounds have exotic functional properties that can be applied for various electronic applications; however, the limited availability of epitaxial substrates has restricted the study of rutile thin films to a limited range of lattice parameters. Here, rutile GeO 2 is demonstrated as a new rutile substrate with lattice parameters of [Formula: see text] and [Formula: see text]. Rutile GeO 2 single crystals up to 4 mm in size are grown by the flux method. X-ray diffraction reveals high crystallinity with a rocking curve having a full width half-maximum of 0.0572°. After mechanical polishing, a surface roughness of less than 0.1 nm was obtained, and reflection high-energy electron diffraction shows a crystalline surface. Finally, epitaxial growth of (110)-oriented TiO 2 thin films on GeO 2 substrates was demonstrated using molecular beam epitaxy. Templated by rutile GeO 2 substrates, our findings open the possibility of stabilizing new rutile thin films and strain states for the tuning of physical properties.